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Articles tagged with: Gallium Nitride and Opex
3G Base Station Amplifiers That Can Reduce Waste Heat Nearly 50%
TriQuint tested the first of its new HV-HBT amplifiers in a design commonly used by base station amplifier manufacturers that pairs devices in a 'Doherty' configuration. Used in this manner, the devices delivered an efficiency level of 57%, surpassing the efficiencies available using either conventional laterally-diffused metal oxide semiconductor (LDMOS) transistors or more expensive gallium nitride (GaN) devices. more
Related Tags: semiconductor, analytics, strategy-analytics, wcdma, triquint, triquint-semiconductor, tower, gallium-arsenide, power-amplifier
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