TriQuint to Improve GSM Power Amp Manufacturing

TriQuint Semiconductor says that it is collaborating with Amkor Technology to commercialize a low-cost flip-chip assembly process for GaAs semiconductors based on TriQuint's CuFlip bumping technology. Using CuFlip copper 'bumps,' electrical connections once made by wire bonds are now possible by directly linking contact points on a semiconductor die to the module ceramic or laminate substrate.

TriQuint has already introduced the CuFlip process in the ultra-small 6x6mm TQM 7M4009 GSM power amplifier module (PAM) enabled by CuFlip. The high-density interconnect capability of CuFlip enabled a 40% size reduction in this GSM PA and improved RF performance compared to its predecessor. The direct thermal connection to the surface of the substrate provided by CuFlip bumps is especially valuable in power amplifier design. It enables smaller die sizes and improved long-term reliability due to lowered die operating temperatures.

"Amkor has been an excellent partner in the development of our CuFlip assembly process. Their extensive expertise in flip-chip assembly and process development has helped us meet our performance and scheduled requirements," said Ron Ruebusch, TriQuint Vice President of TriQuint's Oregon Operations. Ruebusch added that CuFlip-based assembly is another important milestone in TriQuint's long-term strategy of integrating the RF front-end for mobile phones utilizing the company's broad technology portfolio of power amplifiers, pHEMT switches, integrated passives and SAW filter components.

The CuFlip(TM) process is compatible with standard laminate substrate materials. Semiconductors manufactured for CuFlip assembly require substantially less processing compared to products intended for wire-bond assembly, resulting in lower cost due to higher-yield, faster cycle time, reduced work-in-progress, and lowered capital equipment expenses. The repeatability of a CuFlip(TM)-based module is increased compared to an equivalent wire-bond module due to better control of the interconnect process resulting in improved RF performance."

Posted to the site on 26th August 2003