IBM and ARM Collaborate on Low-Power Chips for Mobile Phones
Published on: 18th Jan 2011
Note -- this news article is more than a year old.
UK based ARM Holdings who develop the semiconductor chips used in most mobile phones has announced an agreement with IBM to develop the next generation of low power semiconductor chips. The resulting technology will provide a suite of optimized physical and processor IP by ARM tuned to IBM's advance manufacturing process down to 14nm providing streamlined development and earlier introduction of advanced consumer electronics into the marketplace.
Through this agreement ARM and IBM will collaboratively develop design platforms aligning the manufacturing process, microprocessor and physical IP design teams. This collaboration will minimize the risk and barriers to migrating to smaller geometries while enabling optimized density, performance, power and yield in advanced SoC designs; accelerating the introduction of advanced electronics into the marketplace.
"ARM's Cortex processors have become the leadership platform for the majority of smart phones and many other emerging mobile devices," said Michael Cadigan, general manager, IBM Microelectronics. "We plan to continue working closely with ARM and our foundry customers to speed the momentum of ARM technology by delivering highly advanced, low-power semiconductor technology for a variety of new communications and computing devices"
Past collaboration with IBM and ARM on advanced geometries have been underway since 2008, resulting in the implementation of extensive process and physical IP refinements to improve SoC density, routability, manufacturability, power consumption, and performance. Moreover, through the previous collaboration on the 32nm and 28nm ARM has already delivered eleven test chips that provide concrete research structures and early silicon validation. In addition, ARM has developed specific optimizations targeting ARM processor cores including most recently a complete ARM Cortex-A9 processor core implemented on 32nm High-K Metal Gate technology.