Hynix Develops 1Gbit Memory for Mobile Phones

South Korea's Hynix Semiconductor says that it has developed the industry's smallest 1 Gigabit mobile DRAM for use within mobile phones. The product is also the industry's first commercially available 1Gb mobile DRAM built on Hynix's 66 nm process technology. The finer processing geometry reduces die size but also improves speed and power characteristics of the device.

It operates at a maximum clock speed of 200MHz resulting in a throughput of up to 1.6 Gbytes of data per second with a 32-bit I/O â€" the fastest in the industry. The product consumes very low power, under worst case conditions, extending battery life in a wide range of portable electronic devices.

Hynix plans to begin mass production from the first quarter of 2008. The product will be available as 'NAND flash Multi-Chip Package (NAND MCP)', which combines DRAM and NAND flash in a single package, or 'package-on-package (POP)'stack. It will also be offered as 'KGD (Known Good Die)' for System in Package (SIP) applications.

Posted to the site on 13th August 2007